2
RF Device Data
Freescale Semiconductor, Inc.
MRF6VP3091NR1 MRF6VP3091NR5
MRF6VP3091NBR1 MRF6VP3091NBR5
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
2 (2001--4000 V)
Machine Model (per EIA/JESD22--A115)
B (201--400 V)
Charge Device Model (per JESD22--C101)
IV (>1000 V)
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD22--A113, IPC/JEDEC J--STD--020
3
260
°C
Table 5. Electrical Characteristics
(TA
=25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
(1)
Gate--Source Leakage Current
(VGS
=5Vdc,VDS
=0Vdc)
IGSS
?
?
0.5
μAdc
Drain--Source Breakdown Voltage
(ID
=50mA,VGS
=0Vdc)
V(BR)DSS
115
?
?
Vdc
Zero Gate Voltage Drain Leakage Current
(VDS
=50Vdc,VGS
=0Vdc)
IDSS
?
?
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS
= 100 Vdc, VGS
=0Vdc)
IDSS
?
?
20
μAdc
On Characteristics
Gate Threshold Voltage
(1)
(VDS
=10Vdc,ID
= 100
μAdc)
VGS(th)
0.9
1.6
2.4
Vdc
Gate Quiescent Voltage
(VDD
=50Vdc,ID
= 350 mAdc, Measured in Functional Test)
VGS(Q)
2.0
2.7
3.5
Vdc
Drain--Source On--Voltage
(1)
(VGS
=10Vdc,ID
=0.25Adc)
VDS(on)
?
0.2
?
Vdc
Dynamic Characteristics
Reverse Transfer Capacitance
(2)
(VDS
=50Vdc±
30 mV(rms)ac @ 1 MHz, VGS
=0Vdc)
Crss
?
41
?
pF
Output Capacitance
(2)
(VDS
=50Vdc±
30 mV(rms)ac @ 1 MHz, VGS
=0Vdc)
Coss
?
65.4
?
pF
Input Capacitance
(2)
(VDS
=50Vdc,VGS
=0Vdc±
30 mV(rms)ac @ 1 MHz)
Ciss
?
591
?
pF
Functional Tests
(In Freescale Single--Ended Narrowband Test Fixture, 50 ohm system) VDD
=50Vdc,IDQ
= 350 mA, Pout
=18WAvg.,
f = 860 MHz, DVB--T (8k OFDM) Single Channel. ACPR measured in 7.61 MHz Channel Bandwidth @
±4 MHz Offset @ 4 kHz Bandwidth.
Power Gain
Gps
21.0
22.0
24.0
dB
Drain Efficiency
ηD
27.5
28.5
?
%
Adjacent Channel Power Ratio
ACPR
?
--62.0
--60.0
dBc
Input Return Loss
IRL
?
-- 1 4
-- 9
dB
1. Each side of device measured separately.
2. Part internally input matched.
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